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Product Description
Features
- Power Supply: VDD=1.2V Typical
- VDDQ = 1.2V Typical
- VPP - 2.5V Typical
- VDDSPD=2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Dual-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 16 internal banks; 4 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.23” (31.25mm)
- RoHS Compliant and Halogen-Free
| Model | KVR26N19D8/16 |
| CL(IDD) | 19 cycles |
| Row Cycle Time (tRCmin) | 45.75ns(min.) |
| Refresh to Active/Refresh Command Time (tRFCmin) | 350ns(min.) |
| Row Active Time (tRASmin) | 32ns(min.) |
| Maximum Operating Power | TBD W* |
| UL Rating | 94 V - 0 |
| Operating Temperature | 0°C to +85°C |
| Storage Temperature | -55°C to +100°C |
| Latency | 19-19-19 |
| Warranty | Lifetime |
| Note | ***Features, Price and Specifications are subject to change without notice. |
Item specifics
- MODEL KVR26N19D8/16
- SERIES VALUE
- MEMORY TYPE DDR 4
- MEMORY SIZE 16 GB
- KIT TYPE 16GB x 1
- TESTED SPEED 2666 MHz
- TESTED LATENCY 19-19-19
- TESTED VOLTAGE 1.2 V
- WARRANTY Lifetime