SAMSUNG INTERNAL SSD 850 EVO 2TB (MZ-75E2T0BW)

Out Of Stock SAMSUNG INTERNAL SSD 850 EVO 2TB (MZ-75E2T0BW)

FEATURES

What is 3D V-NAND and how does it differ from existing technology?

Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utiliSing a smaller footprint.

OptimiSe daily computing with TurboWrite technology for unrivalled read/write speeds

Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.

* PCmark7 (250 GB ): 6,700 (840 EVO) > 7,600 (850 EVO)

** Random Write (QD32, 120 GB): 36,000 IOPS (840 EVO) > 88,000 IOPS (850 EVO)

Get into the fast lane with the improved RAPID mode

Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.

* PCMARK7 RAW (250 GB): 7,500 > 15,000 (Rapid mode)

Guaranteed endurance and reliability bolstered by 3D V-NAND technology

The 850 EVO delivers guaranteed endurance and reliability by doubling the T BW* compared to the previous generation 840 EVO** backed by an industry leading 5 year warranty. The 850 EVO through minimised performance degradation allows sustained performance improvements of up to 30% over the 840 EVO proving to be one of the most dependable storage devices***.

* TBW: Total Bytes Written

** TBW: 43 (840 EVO) > 75 (850 EVO 120/250 GB),150 (850 EVO 500/1 TB)

*** Sustained Performance (250 GB): 3300 IOPS (840 EVO) > 6500 IOPS (850 EVO), Performance measured after 12 hours “Random Write” test

Compute longer with improved energy efficiency backed by 3D V-NAND

The 850 EVO delivers significantly longer battery life on your notebook with a controller optimised for 3D V-NAND now enabling Device Sleep at a highly efficient 2mW. The 850 EVO is now 25% more power efficient to the 840 EVO during write operations* thanks to 3D V-NAND only consuming half the energy than that of Planar 2D NAND.

* Power (250 GB): 3.2 Watt (840 EVO) > 2.4 Watt (850 EVO)

HARD DRIVES
CAPACITY 2TB
SERIES 850 EVO
FORM FACTOR 2.5 INCH
Detailed Spec.

Application

Client PCs

Capacity

2,000 GB (1 GB = 1 Billionbyte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Form Factor

2.5 inch

Interface

SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Dimension (WxHxD)

100.00 x 69.85 x 6.80 (mm)

Weight

Max 66 g

Storage Memory

Samsung 32 layer 3D V-NAND

Controller

Samsung MHX Controller

Cache Memory

Samsung 2 GB Low Power DDR3 SDRAM

Special Feature

TRIM Support

TRIM Supported

S.M.A.R.T Support

S.M.A.R.T Supported

GC (Garbage Collection)

uto Garbage Collection Algorithm

Encryption Support

AES 256 bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

WWN Support

World Wide Name supported

Device Sleep Mode Support

Yes

Performance

Sequential Read

Up to 540 MB/sec Sequential Read * Performance may vary based on system hardware & configuration

Sequential Write

Up to 520 MB/sec Sequential Write * Performance may vary based on system hardware & configuration

Random Read (4KB, QD32)

Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration

Random Write (4KB, QD32)

Up to 90,000 IOPS Random Write * Performance may vary based on system hardware & configuration

Random Read (4KB, QD1)

Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration

Random Write (4KB, QD1)

Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration

Environment

Average Power Consumption (system leve

*Average: 4.7 Watts *Maximum: 7.2 Watts (Burst mode)* Actual power consumption may vary depending on system hardware & configuration

Power consumption (Idle)

Max. 60 mWatts *Actual power consumption may vary depending on system hardware & configuratioQ

Allowable Voltage

5 V ± 5% Allowable voltage

Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Operating Temperature

0 - 70 °C

Shock

1,500 G & 0.5 ms (Half sine)

Software

Management SW

Magician Software for SSD management

Warranty

5 Years

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  • Brand: SAMSUNG
  • Product Code: MZ-75E2T0BW
  • Availability: Out Of Stock
  • Rs.50,845
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